| PART |
Description |
Maker |
| IDT70727807 |
HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
|
Integrated Device Technology
|
| WS57C256F WS57C256F-35 WS57C256F-35C WS57C256F-35D |
-WS57C256F MILITARY HIGH SPEED 32K X 8 CMOS EPROM
32K X 8 OTPROM, 55 ns, PDIP28
HIGH SPEED 32K x 8 CMOS EPROM 高2K的8的CMOS存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| AT27BV256-90TI AT27BV256 AT27BV256-12JC AT27BV256- |
High Speed CMOS Logic Dual 4-Stage Binary Counters 14-SOIC -55 to 125 32K X 8 OTPROM, 150 ns, PDSO28
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125
High Speed CMOS Logic Dual Decade Ripple Counters 16-SOIC -55 to 125
High Speed CMOS Logic Dual 4-Input NOR Gates 14-PDIP -55 to 125
256K 32K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM)
32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| IDT707288L IDT707288L20G IDT707288L20PF IDT707288L |
HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS 64K X 16 DUAL-PORT SRAM, 20 ns, PQFP100
Low-Noise JFET-Input Operational Amplifier 8-SOIC 0 to 70
|
Integrated Device Technology, Inc.
IDT
|
| IC61LV256- IC61LV256 IC61LV256-15TG IC61LV256-8TIG |
32K x 8 Hight Speed SRAM with 3.3V
32K x 8 Hight Speed SRAM with 3.3V 32K的8 Hight高速SRAM.3V
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Integrated Circuit Solu...
Ecliptek, Corp.
ICSI[Integrated Circuit Solution Inc]
|
| AS7C513B AS7C513B-20TI AS7C513B-10JC AS7C513B-10JI |
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-PDIP -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44
5V 32K x 16 CMOS SRAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 12 ns, PDSO44
High Speed CMOS Logic Dual 2-to-4 Line Decoders/Demultiplexers 16-PDIP -55 to 125
SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IDT70V27S25BF IDT70V27S25BFI IDT70V27L25BF IDT70V2 |
HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 55 ns, PQFP100
Shaft; Style: 1 - light; Applicable Model: SE / SEFB
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| IDT70V7319S-15 |
HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM
|
Integrated Device Techn...
|
| 70V7599S200BF 70V7599S133BC IDT70V7599S IDT70V7599 |
HIGH-SPEED 3.3V 128K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
|
Integrated Device Technology
|
